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| Rev. 1.0 BSS119 SIPMOS Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS119 Package SOT23 Ordering Code Q67000-S007 Tape and Reel Information E6327: 3000 pcs/reel Marking sSH Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value 0.17 0.13 Unit A Pulsed drain current TA=25C I D puls dv/dt VGS Ptot 0.68 6 20 0.36 -55... +150 55/150/56 kV/s V W C Reverse diode dv/dt IS=0.17A, VDS=80V, di/dt=200A/s, Tjmax=150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2002-12-10 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250A BSS119 Symbol min. RthJS - Values typ. max. 350 Unit K/W Symbol min. V(BR)DSS Values typ. 1.8 max. 2.3 Unit 100 1.3 V Gate threshold voltage, VGS = VDS ID=50A VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25C VDS=100V, VGS=0, Tj=150C A 0.05 0.5 10 4.9 3.4 0.1 5 100 10 6 nA Gate-source leakage current VGS=20V, VDS=0 I GSS RDS(on) RDS(on) - Drain-source on-state resistance VGS=4.5V, ID=0.13 A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2002-12-10 Rev. 1.0 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=50V, VGS=10V, ID=0.17A, RG=6 VDS2*ID*RDS(on)max, ID=0.13A VGS=0, VDS=25V, f=1MHz BSS119 Symbol Conditions min. 0.08 - Values typ. 0.17 60 8.6 3.1 2.7 3.1 9.3 27 max. 78 11.2 4.1 4 4.6 14 40 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gs Q gd VDD =80V, ID =0.17A - 0.08 0.76 1.67 3.4 0.12 1.1 2.5 - nC Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Qg VDD =80V, ID =0.17A, VGS =0 to 10V V(plateau) VDD =80V, ID = 0.17 A V IS TA=25C - 0.8 21.7 10 0.17 0.68 1.2 32.5 15 A Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF = IS VR=50V, I F=lS , diF/dt=100A/s - V ns nC Page 3 2002-12-10 Rev. 1.0 1 Power dissipation Ptot = f (TA) 0.38 BSS119 BSS119 2 Drain current ID = f (TA) parameter: VGS 10 V BSS119 0.18 W A 0.32 0.14 0.28 P tot ID 0.1 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 120 0.24 0.2 0.16 0.12 0.08 0.04 0 0 0.12 C 160 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 BSS119 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS119 K/W A 10 2 10 0 /ID = V DS n (o ) tp = 240.0s Z thJA 10 1 ID 1 ms RD S 10 -1 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 0.02 10 -2 10 -2 DC 10 -3 0 10 10 -3 -7 10 single pulse 2 3 -6 -5 -4 -3 -2 0.01 10 1 10 V 10 10 10 10 10 10 s 10 0 VDS Page 4 tp 2002-12-10 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 0.34 BSS119 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 12 7V 6V 0.28 5V 4.8V 4.6V 0.24 4V 3.8V 0.2 3.4V 0.16 A 10V 10 R DS(on) 9 8 7 6 5 3.4V 3.8V 4V 4.6V 4.8V 5V 6V 7V 10V ID 0.12 0.08 0.04 4 3 2 1 0 0 0.5 1 1.5 2 V VDS 3 0 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 A ID 0.34 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.34 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.3 A 0.28 0.24 S 0.24 0.22 gfs 0.8 1.6 2.4 3.2 4.4 V VGS 0.2 0.18 0.16 ID 0.2 0.16 0.14 0.12 0.12 0.08 0.04 0 0 0.1 0.08 0.06 0.04 0.02 0 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 A 0.34 ID Page 5 2002-12-10 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V 24 BSS119 BSS119 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =50A 2.6 V 98% 20 2.2 R DS(on) V GS(th) 18 16 14 12 10 8 6 98% 2 1.8 1.6 1.4 1.2 1 typ. 2% 4 2 0 -60 -20 20 typ 0.8 0.6 -60 60 100 C 180 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 BSS119 pF A 10 C 2 Ciss 10 -1 Coss 10 1 IF 10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 V 30 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2002-12-10 Rev. 1.0 13 Typ. gate charge VGS = f (QG ); parameter: VDS , BSS119 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS119 ID = 0.17 A pulsed, Tj = 25 C 16 V BSS119 120 V 12 V (BR)DSS 0.2 VDS max 0.5 VDS max 0.8 VDS max nC 114 112 110 108 106 104 102 100 V GS 10 8 6 4 98 96 2 94 92 0 0 0.4 0.8 1.2 1.6 2 2.6 90 -60 -20 20 60 100 C 180 QG Tj Page 7 2002-12-10 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSS119 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-12-10 |
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